EMH59T2R
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | EMH59T2R |
| Manufacturer | LAPIS Semiconductor |
| Description | TRANS 2NPN PREBIAS 0.15W EMT6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Power Max | 150mW |
| Packaging | Original-Reel® |
| Other Names | EMH59T2RDKR |
| Package Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Resistor Base R1 | 10 kOhms |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 70mA 250MHz 150mW Surface Mount EMT6 |
| Frequency Transition | 250MHz |
| Vce Saturation Max Ib Ic | 150mV @ 500µA, 5mA |
| Current Collector Ic Max | 70mA |
| Resistor Emitter Base R2 | 47 kOhms |
| Supplier Device Package | EMT6 |
| D C Current Gainh F E Min Ic Vce | 80 @ 5mA, 10V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |