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Product Image
EMF8T2R

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EMF8T2R
Manufacturer LAPIS Semiconductor
Description TRANS NPN PREBIAS/NPN 0.15W EMT6
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Power Max 150mW
Packaging Tape & Reel (TR)
Package Case SOT-563, SOT-666
Mounting Type Surface Mount
Resistor Base R1 47 kOhms
Transistor Type 1 NPN Pre-Biased, 1 NPN
Detailed Description 354530
Frequency Transition 250MHz, 320MHz
Vce Saturation Max Ib Ic 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current Collector Ic Max 100mA, 500mA
Resistor Emitter Base R2 47 kOhms
Supplier Device Package EMT6
D C Current Gainh F E Min Ic Vce 68 @ 5mA, 5V / 270 @ 10mA, 2V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V, 12V

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