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EMD30T2R

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EMD30T2R
Manufacturer LAPIS Semiconductor
Description TRANS NPN/PNP PREBIAS 0.15W EMT6
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Power Max 150mW
Packaging Tape & Reel (TR)
Other Names EMD30T2R-ND EMD30T2RTR
Package Case SOT-563, SOT-666
Mounting Type Surface Mount
Base Part Number *MD30
Resistor Base R1 10 kOhms, 1 kOhms
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Detailed Description 350060
Frequency Transition 250MHz, 260MHz
Vce Saturation Max Ib Ic 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Current Collector Ic Max 100mA, 200mA
Resistor Emitter Base R2 10 kOhms
Supplier Device Package EMT6
D C Current Gainh F E Min Ic Vce 30 @ 5mA, 5V / 140 @ 100mA, 2V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V, 30V

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