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EMD29T2R

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EMD29T2R
Manufacturer LAPIS Semiconductor
Description TRANS NPN/PNP PREBIAS 0.12W EMT6
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Power Max 120mW
Packaging Original-Reel®
Other Names EMD29T2RDKR
Package Case SOT-563, SOT-666
Mounting Type Surface Mount
Base Part Number *MD29
Resistor Base R1 1 kOhms, 10 kOhms
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Detailed Description 365082
Frequency Transition 250MHz, 260MHz
Vce Saturation Max Ib Ic 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current Collector Ic Max 100mA, 500mA
Resistor Emitter Base R2 10 kOhms
Supplier Device Package EMT6
D C Current Gainh F E Min Ic Vce 30 @ 5mA, 5V / 140 @ 100mA, 2V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V, 12V

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