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EMB10T2R

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EMB10T2R
Manufacturer LAPIS Semiconductor
Description TRANS 2PNP PREBIAS 0.15W EMT6
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Power Max 150mW
Packaging Tape & Reel (TR)
Other Names EMB10T2R-ND EMB10T2RTR
Package Case SOT-563, SOT-666
Mounting Type Surface Mount
Base Part Number MB10
Resistor Base R1 2.2 kOhms
Transistor Type 2 PNP - Pre-Biased (Dual)
Detailed Description 350021
Frequency Transition 250MHz
Vce Saturation Max Ib Ic 300mV @ 250µA, 5mA
Current Collector Ic Max 100mA
Resistor Emitter Base R2 47 kOhms
Supplier Device Package EMT6
D C Current Gainh F E Min Ic Vce 80 @ 10mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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