1N8032-GA
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | 1N8032-GA |
| Manufacturer | GeneSiC Semiconductor |
| Description | DIODE SCHOTTKY 650V 2.5A TO257 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Voltage Forward Vf Max If | 1.3V @ 2.5A |
| Voltage D C Reverse Vr Max | 650V |
| Supplier Device Package | TO-257 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Timetrr | 0ns |
| Packaging | Tube |
| Package Case | TO-257-3 |
| Other Names | 1242-1119 1N8032GA |
| Operating Temperature Junction | -55°C ~ 250°C |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Diode Type | Silicon Carbide Schottky |
| Detailed Description | Diode Silicon Carbide Schottky 650V 2.5A Through Hole TO-257 |
| Current Reverse Leakage Vr | 5µA @ 650V |
| Current Average Rectified Io | 2.5A |
| Capacitance Vr F | 274pF @ 1V, 1MHz |
| Base Part Number | 1N8032 |