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1N8032-GA

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Product Details

Part Number 1N8032-GA
Manufacturer GeneSiC Semiconductor
Description DIODE SCHOTTKY 650V 2.5A TO257
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Diodes - Rectifiers - Single
Lead Free Status Ro H S Status Contains lead / RoHS non-compliant
Voltage Forward Vf Max If 1.3V @ 2.5A
Voltage D C Reverse Vr Max 650V
Supplier Device Package TO-257
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Timetrr 0ns
Packaging Tube
Package Case TO-257-3
Other Names 1242-1119 1N8032GA
Operating Temperature Junction -55°C ~ 250°C
Mounting Type Through Hole
Moisture Sensitivity Level M S L 1 (Unlimited)
Diode Type Silicon Carbide Schottky
Detailed Description Diode Silicon Carbide Schottky 650V 2.5A Through Hole TO-257
Current Reverse Leakage Vr 5µA @ 650V
Current Average Rectified Io 2.5A
Capacitance Vr F 274pF @ 1V, 1MHz
Base Part Number 1N8032

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