1N8031-GA
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | 1N8031-GA |
| Manufacturer | GeneSiC Semiconductor |
| Description | DIODE SCHOTTKY 650V 1A TO276 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Other Names | 1242-1118 1N8031GA |
| Ro H S Status | Tube |
| Mounting Type | Through Hole |
| Polarization | TO-276AA |
| Resistance If F | 76pF @ 1V, 1MHz |
| Capacitance Vr F | -55°C ~ 250°C |
| Voltage Breakdown | TO-276 |
| Diode Configuration | 5µA @ 650V |
| Expanded Description | Diode Silicon Carbide Schottky 650V 1A Through Hole TO-276 |
| Voltage Forward Vf Max If | 1A |
| Voltage Peak Reverse Max | Silicon Carbide Schottky |
| Manufacturer Part Number | 1N8031-GA |
| Reverse Recovery Timetrr | No Recovery Time > 500mA (Io) |
| Current Reverse Leakage Vr | 1.5V @ 1A |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | 0ns |
| Current Average Rectified Ioper Diode | 650V |