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1N6625E3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number 1N6625E3
Manufacturer Microsemi Corporation
Description DIODE GEN PURP 1.1KV 1A AXIAL
Category Discrete Semiconductor Products
Subcategory Diodes - Rectifiers - Single
Ro H S Status Bulk
Mounting Type Through Hole
Polarization A, Axial
Capacitance Vr F -65°C ~ 150°C
Voltage Breakdown A, Axial
Diode Configuration 1µA @ 1000V
Expanded Description Diode Standard 1100V (1.1kV) 1A Through Hole A, Axial
Voltage Forward Vf Max If 1A
Voltage Peak Reverse Max Standard
Manufacturer Part Number 1N6625E3
Reverse Recovery Timetrr Fast Recovery = 200mA (Io)
Current Reverse Leakage Vr 1.95V @ 1.5A
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Moisture Sensitivity Level M S L 1 (Unlimited)
Operating Temperature Junction 80ns
Current Average Rectified Ioper Diode 1100V (1.1kV)

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