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1N5809US

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number 1N5809US
Manufacturer Microsemi
Description DIODE GEN PURP 100V 3A B-MELF
Category Discrete Semiconductor Products
Subcategory Diodes - Rectifiers - Single
Speed Fast Recovery = 200mA (Io)
Diode Type Standard
Packaging Bulk
Package Case SQ-MELF, B
Mounting Type Surface Mount
Capacitance Vr F 60pF @ 10V, 1MHz
Detailed Description 378301
Supplier Device Package B, SQ-MELF
Voltage D C Reverse Vr Max 100V
Voltage Forward Vf Max If 875mV @ 4A
Reverse Recovery Timetrr 30ns
Current Reverse Leakage Vr 5µA @ 100V
Lead Free Status Ro H S Status Contains lead / RoHS non-compliant
Current Average Rectified Io 3A
Moisture Sensitivity Level M S L 1 (Unlimited)
Operating Temperature Junction -65°C ~ 175°C

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